Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers

Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) a hybrid optical metrology study for fast non-destructive detection, classification, characterisation defects 4H–SiC homoepitaxial layers on substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied wafer already during production SiC epilayers subsequent industrial quality control.